Shimadzu Cooperative Research: Successfully increased the analytical strength of boron by at least 3 times

[ China Instrument Network Instrument Development ] Professor of the Institute of Multi-Material Science, Tohoku University, Institute of Advanced Testing and Development, Professor Takuchi Masaru, and Assistant Professor Yusuke Nobuyuki, Research Fellow, Quantum Science and Technology Research and Development Agency, Koike Masahiro, Shimadzu Corporation, Japan Electronics Co., Ltd. The X-ray soft X-ray emission spectrometer (SXES)*1 was improved, and the analysis strength of boron*2 was successfully improved by at least 3 times. It is well known that trace amounts of boron have a great influence on the properties of steel materials and semiconductor devices. In order to improve the performance of the SXES combined with the electron microscope, the above four organizations (enterprises) developed a new SXES and implemented a verification test. The analysis of trace boron is expected to contribute to the production of lightweight and high-strength steel sheets and the research and development of high-efficiency semiconductor devices.

In addition, on August 8, 2018, the Institute of Multi-Material Science of Northeastern University, the Center for Advanced Testing and Development, published the results of the study at Microscopy & Microanalysis 2018 in Baltimore, Maryland, USA.

Professor Hiroyuki Masahiro, a researcher at the Center for Research and Development of the Institute of Multi-Material Science, Tohoku University, and a researcher at the Institute of Quantum Science and Technology, Koike Koji, and Shimadzu Corporation, Japan Electronics Co., Ltd., developed a soft X for electron microscopy through collaboration between industry and government. In the luminescence analysis system of the ray emission spectrometer (SXES), in 2013, Japan Electronics Co., Ltd. realized the productization of this product. Since the launch of the device, in view of the high demand for improving the analysis strength of boron (affecting the performance of steel materials and semiconductor devices), further research has been further advanced.

In order to further improve the performance of SXES, Xiaochi Yaren, a researcher at the Quantum Science and Technology Research and Development Agency, has optimized the spectral distribution*3 and the design of an anti-reflection film on the diffraction grating of key components, aiming to improve the analytical strength of boron. Based on this design, the diffraction grating produced by Shimadzu Corporation, the Institute of Multi-Material Science, Tohoku University, and the professor of the Center for Advanced Measurement and Development, Professor Masaru Masaru and Assistant Professor Yusuke Nobuyuki, completed the formation of rare earth elements on the surface of the diffraction grating.

In order to optimize the spectral distribution, a new diffraction grating was assembled on the original SXES of the modified Northeastern University, and the prototype was completed. The test results confirmed that the signal intensity of boron was at least 3 times stronger. In the future, this product will be shipped to the general-purpose SXES from Japan Electronics Co., Ltd., and practical testing will begin. In addition, theoretically, the boron strength is expected to be further improved, so it is expected to develop a SXES that can detect boron in a steel material and a semiconductor material at a concentration of 10 ppm*4 or less and observe the spectral distribution.

If the equipment is generalized, it is expected to increase the fuel economy of the automobile by the weight reduction and high strength of the steel sheet, and contribute to the realization of an energy-saving society through the high efficiency of the semiconductor device, and also contribute to the industrial strength of Japan.

(Original title: Shimadzu cooperation research: successfully increased the analytical strength of boron by at least 3 times)